MRF7P20040HSR5【PDF 1/16 页】MOSFET RF N-CH 40W NI780HS-4

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MRF7P20040HR3 MRF7P20040HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1800 to

2200 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Doherty Single--Carrier W--CDMA Performance: VDD

=32Volts,

IDQA

= 150 mA, VGSB

=1.5Vdc,Pout

= 10 Watts Avg., IQ Magnitude

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @

0.01% Probability

on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

2025 MHz

18.2

42.6

7.3

--34.8

Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW

(1)

Output Power (3 dB Input Overdrive from Rated Pout)

Typical Pout

@ 3 dB Compression Point

50 Watts CW

(1)

Features

Production Tested in a Symmetrical Doherty Configuration

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 15.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(2,3)

225

°C

CW Operation @ TC

=25°C

Derate above 25°C

42.4

0.17

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3,4)

Unit

Thermal Resistance, Junction to Case

Case Temperature 78°C, 10 W CW, 32 Vdc, IDQA

= 150 mA, VGSB

= 1.5 Vdc, 2017.5 MHz

(1),32Vdc,IDQA

= 150 mA, VGSB

= 1.5 Vdc, 2017.5 MHz

Case Temperature 82°C, 40 W CW

RθJC

2.11

1.50

°C/W

1. Exceeds recommended operating conditions. See

CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf. Select Documentation/-

Application Notes -- AN1955.

Document Number: MRF7P20040H

Rev. 2, 12/2010

Freescale Semiconductor

Technical Data

2010--2025 MHz, 10 W AVG., 32 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF7P20040HR3

MRF7P20040HSR3

CASE 465H--02, STYLE 1

NI--780S--4

MRF7P20040HSR3

(Top View)

GSA

31RFoutA/VDSA

Figure 1. Pin Connections

GSB

42RFoutB/VDSB

RFinA/V

RFinB/V

CASE 465M--01, STYLE 1

N I -- 7 8 0 -- 4

MRF7P20040HR3

Freescale Semiconductor, Inc., 2009--2010.

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